Korean-PCS PowerEdge Power Amplifier Module

General Description The RMPA1759 power amplifier module (PAM) is designed for Korean CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby curr

文件：542.34 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Korean-PCS PowerEdge Power Amplifier Module

ONSEMI

安森美半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A) • Low input capacitance Ciss = 190 pF TY

文件：38.49 Kbytes 页数：4 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A) • Low input capacitance Ciss = 190 pF TY

文件：38.49 Kbytes 页数：4 Pages

NEC

瑞萨

High Power Attenuator

文件：132.21 Kbytes 页数：1 Pages

CPI