丝印：3N900；Package：TO-252；N-Channel ENHANCEMENT MODE MOSFET

Features Low Crss Low gate charge Fast switching Improved ESD capability 100% Avalanche Tested ROHS compliant Halogen-free Improved dv/dt capability

文件：622.61 Kbytes 页数：6 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

isc N-Channel MOSFET Transistor

文件：274.97 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 μA (Max.) @ VDS = 900V ■ Low RDS(ON) : 4.679 Ω (Typ.)

文件：260.57 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：280.95 Kbytes 页数：2 Pages

ISC

无锡固电