首页 >RM90N30LD-T>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
300VPDPIGBT Description EmployingUnifiedIGBTTechnology,FGA90N30provideslowconductionandswitchingloss.FGA90N30offerstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features •HighCurrentCapability •Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300VPDPIGBT Description EmployingUnifiedIGBTTechnology,FGA90N30Dprovideslowconductionandswitchingloss.FGA90N30DofferstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features •HighCurrentCapability •Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300V,90APDPIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300V,90APDPIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300V,90APDPIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300V,90APDPIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCconverters •Battery | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsSingleDieMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackSurface) SingleMOSFETDie Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCconverters •Battery | IXYS IXYS Integrated Circuits Division | IXYS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RECTRON-瑞创 |
24+25+/26+27+ |
TO-252-3 |
36218 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
23+ |
N/A |
76800 |
一级代理放心采购 |
询价 | |||
PMC |
22+ |
BGA |
3386 |
品牌专业分销商,可以零售 |
询价 | ||
PMC |
22+ |
BGA |
6868 |
原装现货,可开13%税票 |
询价 | ||
亚成微 |
23+ |
ESOP8 |
7500 |
亚成微全系列在售 |
询价 | ||
UDE |
1736+ |
RJ45 |
15238 |
原厂优势渠道 |
询价 | ||
Raydium |
17+ |
SMD |
4590 |
驱动IC/全新原装 |
询价 | ||
RAYDIUM |
2021+ |
TCP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
RIFA |
D/C |
CDIP |
133 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
5000 |
公司存货 |
询价 |
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