丝印：5A1P30；Package：SOT-23-6；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -30V,ID = -5.1A RDS(ON)

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RECTRON

丽正国际

MOSFET

The RM5A1P30S6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate\n\nvoltages as low as 2.5V. This device is suitable for use as a G\n\nload switch or in PWM applications. • VDS = -30V,ID = -5.1A\n• RDS(ON) < 46mΩ @ VGS=-4.5V RDS(ON) < 32mΩ @ VGS=-10V;

Rectron

丽正国际

专业模块

MITSUBI

上传：谛辉(北京/上海/青岛 )电子科技有限公司

DIP-8

亚成微

上传：深圳市赛尔通科技有限公司

DIP-16

RM

上传：深圳市赛尔通科技有限公司