丝印：30P55；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

文件：419.93 Kbytes 页数：8 Pages

RECTRON

丽正国际

P-Channel Enhancement Mode Power MOSFET

文件：553.72 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

P-Channel Enhancement Mode Power MOSFET

文件：530.35 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON)

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NCEPOWER

新洁能