| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
类型：N沟道漏源电压(Vdss)：55V连续漏极电流(Id)：110A功率(Pd)：200W导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,59AN沟道,55V,110A,8mΩ@10V | Infineon | |||
PowerMOSFET(Vdss=55V,Rds(on)=0.008ohm,Id=110A?? FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigne | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ULTRALOWONRESISTANCE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=60V,Rds(on)=5.5mohm,Id=130A?? VDSS=60V RDS(on)=5.5mΩ ID=130A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXF | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETTRANSISTOR,N-CHANNEL 60Volt,0.017OhmHEXFET TheHEXFET®technologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofeatureallofthewellestablis | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
VERTICALCLIPLITE4MMLITEPIPE | VCC Visual Communications Company | VCC | ||
ENCLOSUREHEATER >Clipfixingandpressureclampforquick mounting >Lowsurfacetemperature >Earthedplasticcasing >Widevoltagerange >Heaterbodyinloopdesignfor optimaltemperaturedistribution >Shockandvibrationproof | STEGOSTEGO STEGO | STEGO | ||
3.5mmJack-Socket,4pole | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
QuartzCrystal DESCRIPTION TheMPcrystalseriesoffersexcellentlong-termstabilityandreliabilityinaprovenresistanceweldmetalpackage.Theexcellentshockperformancemakesitsuitableformicroprocessor,telecommunication,consumerelectronicandnetworkingapplications. FEATURES •StandardHC-49/U | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
54000 |
一级代理放心采购 |
询价 |
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