首页 >RLZJTE1118B>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
500mWZenerLeadlessDiode | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)(BiasResistorbuilt-inTransistor) SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications Withbuilt-inbiasresistors Simplifycircuitdesign Reduceaquantityofpartsandmanufacturingprocess ComplementarytoRN2114MFVtoRN2118MFV | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
1A(Sink&Source)LowDropout,LowQuiescentCurrentVoltageRegulator | SEMTECHSemtech Corporation 升特 | SEMTECH | ||
AdjustableorFixed-ModeRegulator | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
850MHz1WattPowerAmplifierwithActiveBias ProductDescription SirenzaMicrodevices’SPA-1118isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandc | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
850MHz1WATTPOWERAMPLIFIERWITHACTIVEBIAS | RFMD RF Micro Devices | RFMD | ||
850MHz1WattPowerAmplifierwithActiveBias ProductDescription SirenzaMicrodevices’SPA-1118isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandc | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
850MHz1WATTPOWERAMPLIFIERWITHACTIVEBIAS | RFMD RF Micro Devices | RFMD |
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