P-Channel Enhancement Mode MOSFET

Description The RLD13N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Application Brushless motor Load switch Unint

文件：239.92 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：666.59 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：672.55 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：666.59 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体