13N06L中文资料仙童半导体数据手册PDF规格书

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

特性 Features

• 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V

• Low gate charge ( typical 4.8 nC)

• Low Crss ( typical 17 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating