RN1010

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN2010~RN2011

RP1010ZZ-XXXXWN-YY

WraparoundChipResistor

RP1010ZZ-XXXXWN-YYFeatures: •WraparoundTerminalConfiguration •CustomerDefinedTestingAvailable •RoHSCompliantorSnPbAvailable •TapeandReelandWafflePack Available(Standardisbulk) RP1010ZZ-XXXXWN-YYParameters: ResistanceRange(Al2O3andBeO):0.5Ω-1MΩ ResistanceRan

RS1010

SINGLEPHASESILICONBRIDGERECTIFIERS

FEATURES ◾Idealforprintedcircuitboard ◾Realiablelowcostconstructionutilizingmoldedplastictechnique ◾PlasticmaterialhasunderwriterslaboratoryFlammibilityClassification94V-0 ◾Surgeoverloadrating:200amperespeak ◾Mountingposition:Any ◾MountingTorgue:5In.lb.max

RS1010

10/15/25ASURFACEMOUNTGLASSPASSIVATEDBRIDGERECTIFIER

RS1010F

Extremelylowthermalresistance

RS1010FL

SMALLSURFACEMOUNTFASTDIODES

RS1010FL

1A1000VFastrecoverydiode

RS1010FL

SurfaceMountGlassPassivatedFastRecoveryRectifier

Features •GlasspassivatedFastRecoveryrectifiers •Verylowprofile-typicalheightof1.0mm •Lowforwardvoltagedrop •Lowleakagecurrent •Moisturesensitivity:level1,perJ-STD-020 •AEC-Q101qualified •Hightemperaturesolderingguaranteed:260℃/10seconds •Halogen-freeac

RS1010FL

1.0AFastRecoveryRectifier

Features ●Forsurfacemountedapplications ●Lowprofilepackage ●Idealforautomatedplacement ●GlassPassivatedChipJunction ●Hightemperaturesoldering:260℃/10secondsatterminals ●Lead‐free&halogen‐freeparts,RoHScompliant

RS1010FL

SUFACEMOUNTFASTRECOVERYRECTIFIERDIODES

Features ●Glasspassivateddevice ●Idealforsurfacemoutedapplications ●Lowreverseleakage ●Metallurgicallybondedconstruction ●Hightemperaturesolderingguaranteed: ●250°C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension