CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS

Low LC, high allowable ripple current product. 85°C 85% 1000H, Load life of 3000 hours at 125°C. SMD type : Lead free reflow soldering condition at 260°C peak correspondence. Compliant to the RoHS directive (2011/65/EU,(EU)2015/863).

文件：1.01421 Mbytes 页数：11 Pages

nichicon

尼吉康

(Potentiometers) Wirewound

文件：523.07 Kbytes 页数：3 Pages

OHMITE

丝印：RKS；Package：SOT-323；MOSFET

Features - Drive circuits can be simple. - Low on-resistance. - AEC-Q101 Qualified. - ESD protected gate up to 2KV HBM. - High-speed switching. - Parallel use is easy.

文件：500.87 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：RKs；Package：SOT-416；NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ● fT = 9 GHz F = 1.0 dB at 1 GHz

文件：68.44 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：RKS；Package：SOT-23；Switching (60V, 300mA)

Features 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：82.32 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：RKS；Package：SMT3；4V Drive Nch MOS FET

文件：65.209 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：RKS；Package：SMT3；4V Drive Nch MOS FET

文件：61.3 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：RKS；Package：SMT3；4V Drive Nch MOS FET

文件：1.07159 Mbytes 页数：5 Pages

ROHM

罗姆

Silicon Epitaxial Planar Diode for High Speed Switching

Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr =3.0 ns max) • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

文件：85.52 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar Diode for High Voltage Switching

Features • Short reverse recovery time enable fast switching. • Ultra small Resin Package (URP) is suitable for compact and high-density surface mount design.

文件：204.63 Kbytes 页数：8 Pages

RENESAS

瑞萨