丝印：RKS；Package：SOT-323；MOSFET

Features - Drive circuits can be simple. - Low on-resistance. - AEC-Q101 Qualified. - ESD protected gate up to 2KV HBM. - High-speed switching. - Parallel use is easy.

文件：500.87 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：RKs；Package：SOT-416；NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ● fT = 9 GHz F = 1.0 dB at 1 GHz

文件：68.44 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：RKS；Package：SOT-23；Switching (60V, 300mA)

Features 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：82.32 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：RKS；Package：SMT3；4V Drive Nch MOS FET

文件：65.209 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：RKS；Package：SMT3；4V Drive Nch MOS FET

文件：61.3 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：RKS；Package：SMT3；4V Drive Nch MOS FET

文件：1.07159 Mbytes 页数：5 Pages

ROHM

罗姆

Silicon Epitaxial Planar Diode for High Speed Switching

Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr =3.0 ns max) • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

文件：85.52 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar Diode for High Voltage Switching

Features • Short reverse recovery time enable fast switching. • Ultra small Resin Package (URP) is suitable for compact and high-density surface mount design.

文件：204.63 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

Features • Low forward resistance. (rf = 0.7 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

文件：80.73 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

Features • Low forward resistance. (rf = 0.7 Ω max) • Super small Flat Lead Package (SFP) is suitable for surface mount design.

文件：53.58 Kbytes 页数：5 Pages

RENESAS

瑞萨