Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure minimize terminal capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current. • Extremely small Flat Lead Package (EFP) is suitable for surface mount design.

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Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure minimize terminal capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current. • Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.

文件：159.96 Kbytes 页数：5 Pages

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瑞萨

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure minimize terminal capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current. • Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and products.

文件：158.14 Kbytes 页数：5 Pages

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SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES ✶ Low cost ✶ Low leakage ✶ Low forward voltage drop ✶ High current capability

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