Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure minimize terminal capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current. • Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and products.

文件：158.14 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Renesas

瑞萨

SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES ✶ Low cost ✶ Low leakage ✶ Low forward voltage drop ✶ High current capability

文件：251.37 Kbytes 页数：2 Pages

WINGS

永盛电子

2.0A SILICON RECTIFIER

* Diffused Junction * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surge Current Capability

文件：40.51 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes FEATURES * Low cost * Low reverse leakage * Low forward voltage drop * High current capability

文件：44.53 Kbytes 页数：2 Pages

ZOWIE

智威