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型号	下载订购	功能描述	制造商上传企业	LOGO
RJQ6015DPM	文件：117.41 Kbytes Page：10 Pages	600V - 18A - IGBT and Diode Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：117.41 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
RJQ6015DPM-00T0	文件：117.41 Kbytes Page：10 Pages	600V - 18A - IGBT and Diode Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 文件：117.41 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
RJQ6015DPM_15	文件：117.41 Kbytes Page：10 Pages	600V - 18A - IGBT and Diode Application: Inverter 文件：117.41 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
RJQ6015DPM	文件：300 bytes Page：1 Pages	IGBTs	Renesas 瑞萨	Renesas

更多RJQ6015DPM供应商更新时间2026-2-5 15:30:00