IGBT 650V 30A TO-3PFP

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website. • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)\n• Isolated package\n• Trench gate and thin wafer technology (G7H series)\n• High-Speed switching\n• Operation frequency (50Hz ≤ f ˂ 20kHz)\n• Not guarantee short circuit withstand time;

Renesas

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650V - 30A - IGBT

文件：527.22 Kbytes 页数：8 Pages

RENESAS

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Package：SC-94；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH 650V 60A TO-3PFP

Renesas Electronics America Inc

罗姆
SOT323

罗姆

上传：深圳庞田科技有限公司

ROHM/罗姆
UMT3

ROHM/罗姆

上传：佛山市芯光达科技有限公司