首页 >RJP60F5DM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNChannelIGBTHighSpeedPowerSwitching Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
600V-40A-IGBTHighSpeedPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelIGBTHighSpeedPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelIGBTHighSpeedPowerSwitching Features •Highspeedswitching •Lowon-statevoltage •Fastrecoverydiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
600V-40A-IGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5,Ta=25°C,inductiveload) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
600V-40A-IGBTHighSpeedPowerSwitching 600V-40A-IGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Trenchgateandthinwafertechnology Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V, | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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