RKBPC1001

10,15,25,35AFASTRECOVERYBRIDGERECTIFIER

Features ●DiffusedJunction ●LowReverseLeakageCurrent ●FastSwitching,HighEfficiency ●ElectricallyIsolatedEpoxyCasefor MaximumHeatDissipation ●CasetoTerminalIsolationVoltage2500V

RKBPC1001

10,15,25,35AFASTRECOVERYSINGLE-PHASEBRIDGERECTIFIER

RKBPC1001W

10,15,25,35AFASTRECOVERYBRIDGERECTIFIER

Features ●DiffusedJunction ●LowReverseLeakageCurrent ●FastSwitching,HighEfficiency ●ElectricallyIsolatedEpoxyCasefor MaximumHeatDissipation ●CasetoTerminalIsolationVoltage2500V

RKBPC1001W

10,15,25,35AFASTRECOVERYSINGLE-PHASEBRIDGERECTIFIER

RL1001CT

GLASSPASSIVATEDSILICONRECTIFIER

RN1001

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

RQG1001UPAQF

NPNSiliconGermaniumTransistorHighFrequencyLowNoiseAmplifier

Features •IdealforLNAapplications.e.g.Tuner,WirelessLAN,Cordlessphoneandetc. •Highgainandlownoise. MSG=25dBtyp.,NF=0.65dBtyp.atVCE=2V,IC=5mA,f=0.9GHz MSG=22dBtyp.,NF=0.75dBtyp.atVCE=2V,IC=5mA,f=1.8GHz MSG=21dBtyp.,N

RQG1001UP-TL-E

NPNSiliconGermaniumTransistorHighFrequencyLowNoiseAmplifier

Features •IdealforLNAapplications.e.g.Tuner,WirelessLAN,Cordlessphoneandetc. •Highgainandlownoise. MSG=25dBtyp.,NF=0.65dBtyp.atVCE=2V,IC=5mA,f=0.9GHz MSG=22dBtyp.,NF=0.75dBtyp.atVCE=2V,IC=5mA,f=1.8GHz MSG=21dBtyp.,N

RQL1001JLAQH

SiGeMMICHighFrequencyLowNoiseAmplifier

RQL1001JLAQH

SiGeMMICHighFrequencyLowNoiseAmplifier