isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.125Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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600V -30A - SJ MOS FET High Speed Power Switching

Features ● Superjunction MOSFET ● Low on-resistance RDS(on) = 0.100 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C) ● High speed switching tf = 15 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 Ω, Rg = 10 Ω, Ta = 25°C)

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600V -30A - SJ MOS FET High Speed Power Switching

Features ● Superjunction MOSFET ● Low on-resistance RDS(on) = 0.100 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C) ● High speed switching tf = 15 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 Ω, Rg = 10 Ω, Ta = 25°C)

文件：88.18 Kbytes 页数：7 Pages

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600V -30A - SJ MOS FET High Speed Power Switching

● Superjunction MOSFET\n● Low on-resistance\n   RDS(on) = 0.100 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C)\n● High speed switching\n   tf = 15 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 Ω, Rg = 10 Ω, Ta = 25°C);

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600V -30A - SJ MOS FET High Speed Power Switching

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