isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.45Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：297.05 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

文件：88.76 Kbytes 页数：4 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Renesas

瑞萨

Single Diode Ultra Fast Recovery Diode

Features • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 20 A, di/dt = 100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 20 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

文件：81.2 Kbytes 页数：4 Pages

RENESAS

瑞萨

Single Diode Ultra Fast Recovery Diode

Features • Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 20 A, di/dt = 100 A/μs) • Low forward voltage: VF = 2.5 V typ. (at IF = 20 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

文件：87.06 Kbytes 页数：4 Pages

RENESAS

瑞萨

Ball guide prevents over compression of elastomer

文件：97.45 Kbytes 页数：4 Pages

IRONWOOD