RJK6013DPP

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=0.58Ωtyp.(atID=5.5A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching

RJK6013DPP-00-T2

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=0.58Ωtyp.(atID=5.5A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching

RJK6013DPP-A0

600V - 11A - MOS FET High Speed Power Switching

Features Lowon-resistance RDS(on)=0.58typ.(atID=5.5A,VGS=10V,Ta=25C) Lowleakagecurrent Highspeedswitching Qualitygrade:Standard

RJK6013DPP-E0

600V - 11A - MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=0.58Ωtyp.(atID=5.5A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching

RJK6013DPP-E0_15

600V - 11A - MOS FET High Speed Power Switching

RJL6013DPE

SiliconNChannelMOSFETHighSpeedPowerSwitching

RJL6013DPP

SiliconNChannelMOSFETHighSpeedPowerSwitching

RL-6013

?쏬O-PRO??COMMONMODETOROIDSHORIZONTALMOUNT

SBT-BGA-6013

Excellentsignalintegrityathighfrequencies

SCD-6013

1080pAnalogHDDomeCamera

•FullHD(1,920x1,08030fps)Resolution •0.1Lux@F1.2(Color),0.01Lux@F1.2(B/W) •Built-in2.8mmfixedLens •Day&Night(ICR),DWDR,SSNRIV,MotionDetection •TransmissionDistanceMax.500m •EasyInstallation(Plug&Play)