N-Channel Power MOSFET High-Speed Switching Use

Features - VDSS : 150 V - RDS(on) : 30 m (Max) - ID : 50 A

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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无锡固电

N-Channel Power MOSFET High-Speed Switching Use

文件：85.97 Kbytes 页数：7 Pages

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N-Channel Power MOSFET High-Speed Switching Use

Features - VDSS : 150 V - RDS(on) : 30 m (Max) - ID : 50 A

文件：114.75 Kbytes 页数：7 Pages

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N-Channel Power MOSFET High-Speed Switching Use

文件：85.97 Kbytes 页数：7 Pages

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瑞萨

N-Channel Power MOSFET High-Speed Switching Use

文件：85.97 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-Channel Power MOSFET High-Speed Switching Use

-  VDSS : 150 V\n-  RDS(on) : 30 m (Max)\n-  ID : 50 A;

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