isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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N-Channel MOS FET 100 V, 50 A, 11 mΩ

Features • High speed switching • Low drive current • Low on-resistance RDS(on) = 8.8 mΩ typ. (at VGS = 10 V) • Package TO-220FPA • Quality Grade : Standard

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N-Channel MOS FET 100 V, 50 A, 11 m

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N-Channel MOS FET 100 V, 50 A, 11 m?

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N-Channel MOS FET 100 V, 50 A, 11 m

文件：92.2 Kbytes 页数：7 Pages

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N-Channel MOSFET 100 V, 50 A, 11 MΩ

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • High speed switching\n• Low drive current\n• Low on-resistance RDS(on) = 8.8 mΩ typ. (at VGS = 10 V)\n• Package TO-220FPA\n• Quality Grade : Standard\n文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK1003DP;

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