RJK0213DPA技术资料参数批发采购瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RJK0213DPA	文件：157.93 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free 文件：157.93 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0213DPA-00-J53	文件：157.93 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free 文件：157.93 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0213DPA_13	文件：197.09 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：197.09 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0213DPA-00-J5A	文件：197.09 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：197.09 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0213DPA	文件：300 bytes Page：1 Pages	25V, 60A, 2.3m max. Built in SBD N Channel Power MOS FET High Speed Power Switching • High speed switching\n• Capable of 4.5 V gate drive\n• Low drive current\n• High density mounting\n• Low on-resistance\n• Pb-free\n• Halogen-free ;	Renesas 瑞萨	Renesas

型号：
RJK0213DPA
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

更多RJK0213DPA供应商更新时间2025-10-8 14:00:00