isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -25A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 56mΩ(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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无锡固电

P Channel Power MOS FET High Speed Switching

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P Channel Power MOS FET High Speed Switching

Features  VDSS : –60 V  RDS(on) : 56 m (MAX)  ID : –25 A  Lead Mount Type (TO-220FP)

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P Channel Power MOS FET High Speed Switching

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P Channel Power MOS FET High Speed Switching

文件：107.72 Kbytes 页数：7 Pages

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P Channel Power MOS FET High Speed Switching

文件：86.8 Kbytes 页数：7 Pages

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Power MOSFETs

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Power MOSFETs

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