Induction Heating

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IGBT 650V 50A TO-247A Built-In FRD

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website. • Optimized for current resonance application\n• Low collector to emitter saturation voltage VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 °C)\n• Built in fast recovery diode in one package\n• Trench gate and thin wafer technology;

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650V - 50A - IGBT

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Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH 650V 100A TO247A

Renesas Electronics America Inc