RJH60F5

SiliconNChannelIGBTHighSpeedPowerSwitching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RJH60F5

600V-40A-IGBTHighSpeedPowerSwitching

RJH60F5DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

RJH60F5DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

Features •Highspeedswitching •Lowon-statevoltage •Fastrecoverydiode

RJP60F5DPK

600V-40A-IGBTHighSpeedPowerSwitching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5,Ta=25°C,inductiveload)

RJP60F5DPM

600V-40A-IGBTHighSpeedPowerSwitching

600V-40A-IGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Trenchgateandthinwafertechnology Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V,