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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
RJH30H2DPK-M0	文件：158.09 Kbytes Page：7 Pages	SiliconNChannelIGBTHighspeedpowerswitching Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.4Vtyp ●Highspeedswitching:tr=100nstyp,tf=180nstyp ●Lowleakcurrent:ICES=1Amax ●Built-inFastRecoveryDiode:VF=1.4Vtyp,trr=23nstyp	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
RJP30H2DPK-M0	文件：159.37 Kbytes Page：6 Pages	Trenchgateandthinwafertechnology	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
RJP30H2DPK-M0	文件：166.25 Kbytes Page：7 Pages	SiliconNChannelIGBTHighspeedpowerswitching Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.4Vtyp ●Highspeedswitching:tf=100nstyp,tf=180nstyp ●Lowleakcurrent:ICES=1Amax	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

零件编号

下载订购

功能描述/丝印

制造商上传企业

LOGO

RJH30H2DPK-M0

文件：158.09 Kbytes

Page：7 Pages

SiliconNChannelIGBTHighspeedpowerswitching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.4Vtyp ●Highspeedswitching:tr=100nstyp,tf=180nstyp ●Lowleakcurrent:ICES=1Amax ●Built-inFastRecoveryDiode:VF=1.4Vtyp,trr=23nstyp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

RJP30H2DPK-M0

文件：159.37 Kbytes

Page：6 Pages

Trenchgateandthinwafertechnology

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

RJP30H2DPK-M0

文件：166.25 Kbytes

Page：7 Pages

SiliconNChannelIGBTHighspeedpowerswitching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.4Vtyp ●Highspeedswitching:tf=100nstyp,tf=180nstyp ●Lowleakcurrent:ICES=1Amax

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

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