首页 >RJGD30008L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SILICONPOWERRECTIFIER 300AmpCurrentRating VRRM200-1600Volts | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SiliconPowerRectifier 300AmpCurrentRating VRRM200-1600Volts | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SchottkyRectifier | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SchottkyRectifier | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SchottkyRectifier | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
TwinDiodeModule TwinDiodeModule •CompactPackage •GlassPassivatedDie •2x300AmpCurrentRating •SimplifiesCircuitAssembly •Non-IsolatedBaseplate •VRRM200-1600Volts •ROHSCompliant | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
TwinDiodeModule | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
TwinDiodeModule | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
MOSFETsSiliconN-channelMOS Applications •DC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)Small,thinpackage (2)High-speedswitching (3)Smallgatecharge:QSW=4.1nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=25mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
INT-A-PAKPowerModuleThyristor/Diode,300A FEATURES •Electricallyisolatedbaseplate •3000VRMSisolatingvoltage •Industrialstandardpackage •Simplifiedmechanicaldesigns,rapidassembly •Highsurgecapability •Largecreepagedistances •ULapprovedfileE78996 •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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