首页 >RJG2001-R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1001~RN1006 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NPNSiliconGermaniumTransistorHighFrequencyMediumPowerAmplifier Features •Idealfor2GHzBandapplications.e.g2.4GHzWLAN,Digitalcordlessphone. •LowDistortionandExcellentLinearity IP3atoutput=+30dBmtyp.,P1dBatoutput=+19dBmtyp.,f=1.8GHz •HighTransitionFrequency fT=20GHztyp. •HighCollectortoEmitterVoltage | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSiliconGermaniumTransistorHighFrequencyMediumPowerAmplifier Features •Idealfor2GHzBandapplications.e.g2.4GHzWLAN,Digitalcordlessphone. •LowDistortionandExcellentLinearity IP3atoutput=+30dBmtyp.,P1dBatoutput=+19dBmtyp.,f=1.8GHz •HighTransitionFrequency fT=20GHztyp. •HighCollectortoEmitterVoltage | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SINLE-PHASESILICONBRIDGERECTIFIER VOLTAGERANGE-50to1000Volts CURRENT-20Amperes FEATURES •Lowleakage •Lowforwardvoltage •Mountingposition:Any •Surgeoverloadrating:250amperespeak •Siliver-platedcopperleads | CHENG-YICHENG-YI ELECTRONIC CO., LTD. 辰頤電子辰頤電子有限公司 | CHENG-YI | ||
SINGLE-PHASESILICONBRIDGERECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT20Amperes) | RECTRON Rectron Semiconductor | RECTRON | ||
20AGLASSPASSIVATEDBRIDGERECTIFIER | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC |
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