首页 >RJG1001-R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
10,15,25,35AFASTRECOVERYBRIDGERECTIFIER Features ●DiffusedJunction ●LowReverseLeakageCurrent ●FastSwitching,HighEfficiency ●ElectricallyIsolatedEpoxyCasefor MaximumHeatDissipation ●CasetoTerminalIsolationVoltage2500V | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE | ||
10,15,25,35AFASTRECOVERYSINGLE-PHASEBRIDGERECTIFIER | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE | ||
10,15,25,35AFASTRECOVERYBRIDGERECTIFIER Features ●DiffusedJunction ●LowReverseLeakageCurrent ●FastSwitching,HighEfficiency ●ElectricallyIsolatedEpoxyCasefor MaximumHeatDissipation ●CasetoTerminalIsolationVoltage2500V | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE | ||
10,15,25,35AFASTRECOVERYSINGLE-PHASEBRIDGERECTIFIER | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE | ||
GLASSPASSIVATEDSILICONRECTIFIER | HORNBYNantong Hornby Electronic Co.,Ltd 南通康比电子南通康比电子有限公司 | HORNBY | ||
Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NPNSiliconGermaniumTransistorHighFrequencyLowNoiseAmplifier Features •IdealforLNAapplications.e.g.Tuner,WirelessLAN,Cordlessphoneandetc. •Highgainandlownoise. MSG=25dBtyp.,NF=0.65dBtyp.atVCE=2V,IC=5mA,f=0.9GHz MSG=22dBtyp.,NF=0.75dBtyp.atVCE=2V,IC=5mA,f=1.8GHz MSG=21dBtyp.,N | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSiliconGermaniumTransistorHighFrequencyLowNoiseAmplifier Features •IdealforLNAapplications.e.g.Tuner,WirelessLAN,Cordlessphoneandetc. •Highgainandlownoise. MSG=25dBtyp.,NF=0.65dBtyp.atVCE=2V,IC=5mA,f=0.9GHz MSG=22dBtyp.,NF=0.75dBtyp.atVCE=2V,IC=5mA,f=1.8GHz MSG=21dBtyp.,N | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiGeMMICHighFrequencyLowNoiseAmplifier | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiGeMMICHighFrequencyLowNoiseAmplifier | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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