60 V 3 A N Channel MOS FET Power Switching

Features  Logic level operation.  Built-in the over temperature shut-down circuit and current limitation circuit.  High endurance capability against to the short circuit.  Temperature hysteresis type.  High density mounting  Power supply voltage applies 12 V and 24 V.  AEC-Q101VerD C

文件：225.21 Kbytes 页数：7 Pages

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60 V 3 A N Channel MOS FET Power Switching

Features  Logic level operation.  Built-in the over temperature shut-down circuit and current limitation circuit.  High endurance capability against to the short circuit.  Temperature hysteresis type.  High density mounting  Power supply voltage applies 12 V and 24 V.  AEC-Q101VerD C

文件：225.21 Kbytes 页数：7 Pages

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60V, 3A N Channel Thermal FET Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio • Logic level operation.\n• Built-in the over temperature shut-down circuit and current limitation circuit.\n• High endurance capability against to the short circuit.\n• Temperature hysteresis type.\n• High density mounting\n• Power supply voltage applies 12 V and 24 V.\n• AEC-Q101 VerD Compliant\n•;

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文件：884.89 Kbytes 页数：4 Pages

TAI-TECH

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SMD 4.0x2.5 24.0MHz Crystal Unit

Features: Surface Mount Seam Weld Package Excellent Reliability Performance Good Frequency Perturbation and Stability over Temperature Description and Applications: Surface mount 4.0mmx2.5mm crystal unit for use in wireless telecommunications devices, especially for a need of ultra miniatu

文件：197.95 Kbytes 页数：5 Pages

TAI-SAW

嘉硕科技

150Mbps Wireless Nano USB Network Adapter 5dBi

文件：368.82 Kbytes 页数：5 Pages

LVL1