60V, 3A N Channel Thermal FET Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio • Logic level operation.\n• High endurance capability against to the short circuit.\n• High density mounting\n• AEC-Q101 Compliant;

Renesas

瑞萨

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：ABU / MOSFET

Renesas Electronics America Inc

5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM

文件：546.19 Kbytes 页数：6 Pages

RFMD

威讯联合

5 MHz to 4000 MHz, Low-Noise SiGe HBT MMIC Amplifier

文件：509.89 Kbytes 页数：8 Pages

QORVO

威讯联合

原装正品现货价格优惠

文件：120.175 Kbytes 页数：5 Pages

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