60V, 30A Silicon N Channel Thermal FET Power Switching

Features • Logic level operation (4 V Gate drive). • Built-in the over temperature shut-down circuit. • High endurance capability against to the short circuit. • Latch type shut down operation (need 0 voltage recovery). • Built-in the current limitation circuit. • Power supply voltage applie

文件：154.63 Kbytes 页数：8 Pages

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60V, 30A Silicon N Channel Thermal FET Power Switching

Features • Logic level operation (4 V Gate drive). • Built-in the over temperature shut-down circuit. • High endurance capability against to the short circuit. • Latch type shut down operation (need 0 voltage recovery). • Built-in the current limitation circuit. • Power supply voltage applie

文件：154.63 Kbytes 页数：8 Pages

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瑞萨

60V, 30A Silicon N Channel Thermal FET Power Switching

文件：155.61 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOSFET Series Power Switching

The RJF0619JPD is an N channel MOSFET for body lighting heater, power train, and 24V applicationa. It has built-in overheat protection functions and can function as a thermal FET. • Nch/Pch: Nch\n• Number of channels: Single\n• Automotive: YES\n• VDSS (V): 60\n• ID (A): 30\n• RDS (ON) (mohm) max. @4V to 4.5V: 40\n• RDS (ON) (ohm) typ. @4V to 4.5V: 30\n• RDS (ON) (mohm) max. @8V to 10V: 30\n• RDS (ON) (ohm) typ. @8V to 10V: 21\n• Pch (W): 40\n• Tsd (°C) typ: 175\n• Package Typ;

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：ABU / MOSFET

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