40V, 5A Silicon N Channel Thermal FET Power Switching

Features  Logic level operation (4 V Gate drive).  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Latch type shut down operation (need 0 voltage recovery).  Built-in the current limitation circuit.  High density mounting  Po

文件：277.36 Kbytes 页数：8 Pages

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40V, 5A Silicon N Channel Thermal FET Power Switching

Features  Logic level operation (4 V Gate drive).  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Latch type shut down operation (need 0 voltage recovery).  Built-in the current limitation circuit.  High density mounting  Po

文件：277.36 Kbytes 页数：8 Pages

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40V, 5A Silicon N Channel Thermal FET Power Switching

文件：332.52 Kbytes 页数：8 Pages

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40V, 5A Silicon N Channel Thermal FET Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio • Logic level operation (4 V Gate drive).\n• High endurance capability against to the short circuit.\n• Built-in the current limitation circuit.\n• Power supply voltage applies 12 V.\n• AEC-Q101 Compliant;

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：ABU / MOSFET

Renesas Electronics America Inc