Rad-hard 4.5 A dual low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Non-inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level

文件：1.07901 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

抗辐照双4.5 A低侧MOSFET驱动器

The RHRPM4424 is a flexible, high-frequency dual low-side driver specifically designed to work with high capacitive MOSFETs and IGBTs in an environment with high levels of radiation such as aerospace. The RHRPM4424 outputs can sink and source 4.5 A of peak current independently. By putting in parall • Wide operating voltage range: 4.65 V to 18 V \n• Parallel driving capability up to 9 A \n• Non-inverting configuration \n• Input 5 V logic level compatibility \n• 110 ns typical propagation delay \n• Matched propagation delays between the two channels (5 ns max.)• 20 mV maximum low level output vo;

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意法半导体

Rad-hard 4.5 A dual low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Non-inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level

文件：1.07901 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 4.5 A dual low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Non-inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level

文件：1.07901 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 4.5 A dual low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Non-inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level

文件：1.07901 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 4.5 A dual low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Non-inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level

文件：1.07901 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 4.5 A dual low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Non-inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level

文件：1.07901 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体