Rad-hard 4.5 A dual inverting low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level outp

文件：1.09245 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

抗辐照双路4.5A低侧反相栅极驱动器

The RHRPM4423 is a flexible, high-frequency dual low-side driver specifically designed to work with high capacitive MOSFETs and IGBTs in an environment with high levels of radiation such as aerospace. The RHRPM4423 outputs can sink and source 4.5 A of peak current independently. If two PWM outputs a • Wide operating voltage range: 4.65 V to 18 V \n• Parallel driving capability up to 9 A \n• Inverting configuration \n• Input 5 V logic level compatibility \n• 110 ns typical propagation delay \n• Matched propagation delays between the two channels (5 ns max.)• 20 mV maximum low level output voltag;

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意法半导体

Rad-hard 4.5 A dual inverting low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level outp

文件：1.09245 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 4.5 A dual inverting low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level outp

文件：1.09245 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 4.5 A dual inverting low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level outp

文件：1.09245 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 4.5 A dual inverting low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level outp

文件：1.09245 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 4.5 A dual inverting low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level outp

文件：1.09245 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体