30A, 1200V Hyperfast Dual Diode

The RHRG30120CC is a hyperfast dual diode with soft recovery characteristics (trr < 65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.\nThis device is intended for use as a freewheeling/clamping diode and rectifi • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <65ns\n• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175°C\n• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V\n• Avalanche Energy Rated\n• Planar ConstructionApplications\n• Switchin;

Renesas

瑞萨

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr

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Intersil

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr

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Fairchild

仙童半导体

30 Ampere,1200Volt SwitchMode Single Fast Recovery Epitaxial Diode

GENERAL DESCRIPTION RHRG30120 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability

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THINKISEMI

思祁半导体