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SFH2012A

FIBEROPTICPINPHOTODIODE

FIBEROPTICPINPHOTODIODE

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SFT2012

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

ETCList of Unclassifed Manufacturers

未分类制造商

SFT2012

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2012

HighEnergyNPNTransistor

200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve

SSDI

Solid States Devices, Inc

SG2012

400mA,LowPower,LowDropout,LinearRegulators

GENERALDESCRIPTION TheSG2012low-power,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto400mA.Theyareperfectchoiceforlowvoltage,lowpowerapplications.Anultralowgroundcurrent(120µAat400mAoutput)makesthemattractiveforbatteryo

SGMICROSG Micro Corp

圣邦股份圣邦微电子(北京)股份有限公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SPDL2012

UltraCompactSMDCommonModeChokes

TheSPDLproductSeriesisanewfamilyofultra-compactSMDcommon modechokesforEMIsuppressionofdifferentialmodenoiseasrequiredin electronicdevicesfilteringsignalsovernetworkinterfaces.Itisapplicable intheconsumer,industrialandautomotiveinterfacemarket. Inautomotiv

bel

Bel Fuse Inc.

产品属性

  • 产品编号:

    RG2012NW-KIT-FILE

  • 制造商:

    Susumu

  • 类别:

    套件 > 电阻器套件

  • 系列:

    RG

  • 包装:

    手册

  • 套件类型:

    薄膜

  • 电阻 (欧姆):

    47 ~ 470k

  • 功率 (W):

    1/8W

  • 容差:

    ±0.05%

  • 特性:

    汽车级AEC-Q200

  • 数量:

    3880 件(97 个值 - 每个值 40 件)

  • 安装类型:

    表面贴装型

  • 包括的封装:

    0805(2012 公制)

  • 描述:

    RES KIT 47-470K 1/8W 3880PCS

供应商型号品牌批号封装库存备注价格
SUSUMU
20+
电阻器
7283
就找我吧!--邀您体验愉快问购元件!
询价
SUSUMU
21+
NA
5400
只做原装,一定有货,不止网上数量,量多可订货!
询价
SAMSUNG/三星
2021+
0805
7600
原装现货,欢迎询价
询价
SAMSUNG/三星
21+
0805
10000
公司只做原装,诚信经营
询价
SAMSUNG/三星
21+
0805
10000
只做原装,质量保证
询价
SAMSUNG/三星
21+
0805
13880
公司只售原装,支持实单
询价
SAMSUNG/三星
23+
0805
10000
原装正品,支持实单
询价
SAMSUNG/三星
21+
0805
10000
全新原装现货
询价
SAMSUNG/三星
21+
0805
10000
全新原装现货
询价
SAMSUNG/三星
0805
6000
询价
更多RG2012NW-KIT-FILE供应商 更新时间2025-5-18 10:00:00