10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated

文件：66.36 Kbytes 页数：6 Pages

INTERSIL

10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Renesas

瑞萨

10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated

文件：66.36 Kbytes 页数：6 Pages

INTERSIL

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)

• HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY • FAST TURN-OFF: tf

文件：207.14 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)

• HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY • FAST TURN-OFF: tf

文件：207.14 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET

文件：1.2983 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技