RFT2P03L中文资料INTERSIL数据手册PDF规格书

This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This transistor can be operated directly from integrated circuits.

Formerly developmental type TA49222.

Features

• 2.1A, 30V

• rDS(ON) = 0.150Ω

• Temperature Compensating PSPICE® Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”