2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET

This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulator

文件：91.97 Kbytes 页数：9 Pages

Intersil

2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET

Renesas

瑞萨

COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION RT2P03M is a composite transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=10 KΩ , R2=10KΩ ) ● Mini package for easy mounting APPLICATION Inverted circuit , switching circuit , interface circuit , driver circuit

文件：54.02 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

Dual-P Enhancement Mode MOSFET

文件：516.44 Kbytes 页数：4 Pages

SECOS

喜可士