5MHz to 6GHz Absorptive High Isolation SPDT Switch

Key Features • 5 – 6000 MHz Operation • Symmetric SPDT • Non-Reflective RF1 & RF2 Ports • No Blocking Capacitors Necessary Unless DC Voltage on RF line • High Isolation: 60 dB at 2 GHz • High Input IP3: +66 dBm • +1.8 V Logic Compatible Applications • Cellular, 3G, 4G, 5G Infrastructur

文件：1.80045 Mbytes 页数：13 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting

文件：80.22 Kbytes 页数：7 Pages

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600V - 0.4A - MOS FET High Speed Power Switching

文件：79.07 Kbytes 页数：7 Pages

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