25A, 50V, 0.047 Ohm, N-Channel Power MOSFET

The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching r

文件：104.17 Kbytes 页数：8 Pages

Intersil

25A, 50V, 0.047 Ohm, N-Channel Power MOSFET

The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching r

文件：100.05 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET

The RFP25N05L is an N-Channel logic level power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The RFP25N05L was designed for use wit

文件：47.08 Kbytes 页数：6 Pages

Intersil

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：419.73 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.79 Kbytes 页数：2 Pages

ISC

无锡固电

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：106.53 Kbytes 页数：8 Pages

Intersil

POWER MOS FIELD EFFECT TRANSISTORS

文件：235.65 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

文件：244.66 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：1.31322 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件：1.31324 Mbytes 页数：9 Pages

VBSEMI

微碧半导体