isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -5A@ TC=25℃ ·Drain Source Voltage -VDSS= -120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：261.1 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -5A@ TC=25℃ ·Drain Source Voltage -VDSS= -150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：261.1 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Enhancement-Mode Power Field-Effect Transistors

文件：88.77 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-Channel Enhancement-Mode Power Field-Effect Transistors

文件：88.77 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

文件：238.07 Kbytes 页数：4 Pages

MOSPEC

统懋

P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

文件：238.07 Kbytes 页数：4 Pages

MOSPEC

统懋

P-Channel Enhancement-Mode Power Field-Effect Transistors

文件：88.77 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-Channel Enhancement-Mode Power Field-Effect Transistors

文件：88.77 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET N-CH Si 120V 5A

NJS

Trans MOSFET N-CH Si 150V 5A

NJS