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RFM12N10L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver

文件:101.13 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFM12N10L

Trans MOSFET N-CH 100V 12A

NJS

RFP12N10

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

文件:43.2 Kbytes 页数:5 Pages

Intersil

RFP12N10

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

文件:99.52 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFP12N10

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

文件:99.52 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    75000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    100V

  • Maximum Continuous Drain Current:

    12A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
24+
N/A
3340
询价
HAR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
ISC/固电
23+
TO-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
HARRIS(哈利斯)
20+
TO-3
3000
询价
24+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
询价
Harris Corporation
25+
TO-3
860000
只做原厂原装正品
询价
HARRIS
23+
2脚铁帽
5000
原装正品,假一罚十
询价
NA
TO3
1649
专营CAN铁帽仔
询价
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOSHIBA 光耦 集成电路
Original 元件
原厂原封
10050
TOSHIBA现货原装△-更多数量咨询样品批量支持;详询
询价
更多RFM12N10L供应商 更新时间2025-10-4 16:01:00