首页 >RFM12N10L>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

RFM12N10L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

12N10

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

12N10

12A,100VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12N10

N-Channel100V(D-S)MOSFET

UMWUMW

友台友台半导体

12N10L

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

12N10P

12Amps,100VoltsN-CHANNELPowerMOSFET

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

A12N10P

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

A12N10PP

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

A12N10PP

PERFORATEDPANELS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

BRF12N10

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

CED12N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED12N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CED12N10

N-Channel100V(D-S)MOSFET

FEATURES •DT-TrenchPowerMOSFET •175°CJunctionTemperature •100RgTested APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CED12N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12N10L

N-Channel100V(D-S)MOSFET

FEATURES •DT-TrenchPowerMOSFET •175°CJunctionTemperature •100RgTested APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CED12N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU12N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU12N10

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU12N10

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

供应商型号品牌批号封装库存备注价格
N/A
3340
询价
isc
2024
TO-3
140
国产品牌isc,可替代原装
询价
HAR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
GE
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
ISC/固电
TO-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
HARRIS(哈利斯)
20+
TO-3
3000
询价
HARRIS
23+
2脚铁帽
5000
原装正品,假一罚十
询价
NA
TO3
1649
专营CAN铁帽仔
询价
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOSHIBA
1844+
LQFP
9852
只做原装正品假一赔十为客户做到零风险!!
询价
更多RFM12N10L供应商 更新时间2024-5-7 10:20:00