型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
RFM12N10L | N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver 文件:101.13 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
RFM12N10L | Trans MOSFET N-CH 100V 12A | NJS | NJS | |
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These 文件:43.2 Kbytes 页数:5 Pages | Intersil | Intersil | ||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These 文件:99.52 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These 文件:99.52 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI |
技术参数
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
75000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
100V
- Maximum Continuous Drain Current:
12A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
3340 |
询价 | ||||
HAR |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
ISC/固电 |
23+ |
TO-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
HARRIS(哈利斯) |
20+ |
TO-3 |
3000 |
询价 | |||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Harris Corporation |
25+ |
TO-3 |
860000 |
只做原厂原装正品 |
询价 | ||
HARRIS |
23+ |
2脚铁帽 |
5000 |
原装正品,假一罚十 |
询价 | ||
NA |
TO3 |
1649 |
专营CAN铁帽仔 |
询价 | |||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
TOSHIBA 光耦 集成电路 |
Original 元件 |
原厂原封 |
10050 |
TOSHIBA现货原装△-更多数量咨询样品批量支持;详询 |
询价 |
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