1.8 - 2.2 GHz, 180 Watt GaN Power Amplifier

Qorvo's RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these h ·Advance GaN HEMT Technology\n·Typical Peak Modulated Power > 180W\n·Advanced Heat-Sink Technology\n·Single Circuit for 1.8GHz to 2.2GHz\n·48V Operation Typical Performance:\n·POUT = 45.5dBm\n·Gain = 15dB\n·Drain Efficiency = 31%\n·ACP = -38dBc\n·Linearizable to -55dBc with DPD\n·-25 to 85 degre;

Qorvo

威讯联合

180W GaN Power Amplifier

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RFMD

威讯联合

sot89

RFMD

威讯联合

上传：深圳市向鸿伟业电子有限公司

发射应答器

TI

德州仪器

上传：深圳市诺美思科技有限公司