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RFD12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD12N06RLESM

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD12N06RLESM

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFP12N06

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFP12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP12N06RLE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SDP12N06

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SG12N06DP

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SG12N06DP

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

SG12N06DT

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

SG12N06DT

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SG12N06P

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SG12N06P

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

SG12N06T

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

SG12N06T

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

STD12N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION ■THR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD12N06L

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.115Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTED CH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
FAIRCHILD
22+
TO-252
28600
只做原装正品现货假一赔十一级代理
询价
FAIRCHILD
20+
TO-252
200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FAIRCHILD
2235+
TO-252
14138
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
FAIRCHILD
TO-252
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
FAIRCHILD
23+
TO-252
10000
原装正品现货
询价
FAIRCHILD
23+
TO-252
120
全新原装正品现货,支持订货
询价
F
23+
TO-252
10000
公司只做原装正品
询价
F
TO-252
22+
6000
十年配单,只做原装
询价
F
23+
TO-252
6000
原装正品,支持实单
询价
F
22+
TO-252
25000
只做原装进口现货,专注配单
询价
更多RFD12N06LF供应商 更新时间2024-9-21 14:08:00