| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
UPSNetworkManagementCard2 | SCHNEIDERSchneider electric 施耐德施耐德电气 | SCHNEIDER | ||
PC133ClockGeneratorforSiS630/PentiumIII&SiS540/Socket7Applications | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
PC133ClockGeneratorforSiS630/PentiumIII&SiS540/Socket7Applications | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
6.5A,200V,0.800Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFETS FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFETS FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技 | Vishay | ||
Repetitiveavalancherated DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
1415+ |
TO-263 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
哈里斯 |
23+ |
SOT-263 |
6000 |
专业优势供应 |
询价 | ||
HARRIS/哈里斯 |
21+ |
TO-263 |
30000 |
只做正品原装现货 |
询价 | ||
IR |
2017+ |
TO263 |
35689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
IR |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
IR |
22+ |
TO263 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO263 |
8000 |
只做原装现货 |
询价 | ||
5000 |
公司存货 |
询价 | |||||
SOP8 |
1200 |
正品原装--自家现货-实单可谈 |
询价 | ||||
2023+环保现货 |
SOP8 |
6050 |
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询价 |
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