30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European directive 2002/95/EC Description The RF5L15030CB2 is a 30 W, 50 V, LDMOS FET designed

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STMICROELECTRONICS

意法半导体

30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor

The RF5L15030CB2 is a 30W, 50V LDMOS FETs, designed for applications in the frequency range from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate-source voltage range for improved class C operation \n• In compliance with the european directive 2002/95/EC;

ST

意法半导体

RFMD
QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

RFMD

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

RFMD

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)